| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of fabricating semiconductor device and a method of fabricating an insulation film. SOLUTION: An oxide film 101 for element isolation is formed on a semiconductor substrate 100, and the gates 120 are formed in the element region with the predetermined interval. The first inter-layer insulation film is evaporated in the predetermined thickness on the semiconductor substrate 100 where the gates 120 are formed in the manner that the gap between the gates 120 is not embedded. Next, the first inter-layer insulation film is removed in the predetermined thickness from the entire part thereof with the etching process. Next, after the first inter-layer insulation film is partially removed with the isotropic etching process, the second inter-layer insulation film is evaporated on the first inter-layer insulation film to perfectly embed the gap between the gates 120. In such method of fabricating semiconductor device, the gap between the gates 120 is embedded without any void defect, and reliability of semiconductor device can be improved by conducting the sputter etching process when the inter-layer insulation film 130 is formed on the gate pattern. |
