| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of growing a crystal by which nitrogen can be mixed in crystals without being affected by the supply condition of a group III raw material and a III-V compound semiconductor containing nitrogen and a group V element other than nitrogen in a group V composition can be obtained. SOLUTION: This method of growing a III-V (N(As, P, Sb)) compound semiconductor (wherein, V (N(As, P, Sb)) means that it surely contains a N element as a group V element and at least one kind of element selected from among As, P, and Sb) includes a step of supplying a raw material which does not contain any group III element source, but the nitrogen source of the group V element. |
