| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon LSI device having an insulating film which is at most 15Åin terms of SiO2 by a method wherein physical film thickness of an interface buffer layer which is used for holding excellent interface characteristic with a silicon substrate is reduced with superior controllability while practical existence of the interface buffer layer is maintained. SOLUTION: This method for manufacturing a semiconductor device is provided with a process for forming an insulating film whose essential component is silicon and oxygen on a silicon substrate, a process for forming metal oxide having composition wherein quantity of oxygen is insufficient for that in stoichiometry composition on the insulating film, a process for forming a conductive film on the metal oxide, and a process for thermally treating the above laminated structure.
|
