| 摘要 |
PROBLEM TO BE SOLVED: To obtain a bipolar transistor which uses a bulk substrate or an SOI substrate, which can lower a parasitic capacitance and a parasitic resistance, which can simplify a structure and a process, and which can draw high performance without increasing its production costs. SOLUTION: A second semiconductor layer comprises a second conductivity- type external base region which is installed to be adjacent to an intrinsic base region and a buried insulating layer, and whose carrier concentration is higher than that of the intrinsic base region; and a first conductivity-type collector extraction region which is installed to be adjacent to a collector region and the buried insulating layer, and whose carrier concentration is higher than that of the collector region. A base electrode is connected to the external base region via an opening formed in an interlayer insulating layer, and a collector electrode is connected to the collector extraction region via the opening formed in the interlayer insulating layer.
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