ABRASIVE MATERIAL, CMP SLURRY COMPOSITION, RUTHENIUM PATTERN FORMING METHOD, SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an abrasive material which increases the polishing rate of a ruthenium material even under low polishing pressure, enables a chemical mechanical polishing process to be carried out through a single-stage process by the use of a single kind of slurry, reduces defects in an insulating film, and is capable of improving its polishing properties so as to simplify a chemical mechanical polishing process. SOLUTION: A slurry composition containing diammonium cerium (IV) nitrate [(NH4 )2 Ce(NO3 )6 ] is utilized in a process of chemically, mechanically polishing a ruthenium material.