发明名称 Digitally controllable internal clock generating circuit of semiconductor memory device and method for same
摘要 An internal clock generating circuit of a semiconductor device includes: a delay chain having a plurality of delay units for generating multi-phase clocks by adjusting an input clock; a thermometer for outputting a thermometer code value in response to an input selection data; a multiplexer for selectively outputting one of a plurality of clocks input from the delay chain in response to the thermometer code value of the thermometer; and a pulse regenerator for outputting an adjusted internal clock by restoring a pulse form of the clock output from the multiplexer into its original state and controlling the delay thereof as much as desired.
申请公布号 US2003067338(A1) 申请公布日期 2003.04.10
申请号 US20020041060 申请日期 2002.01.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM NAM-SEOG;YOON YONG-JIN
分类号 G06F13/42;G06F1/06;G06F1/12;G11C7/22;H03K5/14;H03L7/00;(IPC1-7):G06F1/04 主分类号 G06F13/42
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