Vertical internally-connected trench cell device for microelectric device, has substrate with internal strap that connects vertical transistor and capacitor present in trench that is formed deep in substrate

摘要

A vertical internally-connected trench cell (V-ICTC) has a silicon substrate (10) with a deep trench formed in the substrate. An internal strap that is totally-contained within the trench has no direct contact with the substrate. The internal strap connects a vertical transistor and capacitor that are present in the trench. An Independent claim is also included for the production of a dynamic random access memory cell.