发明名称 PLASMA PROCESSOR AND PLASMA PROCESSING METHOD
摘要 <p>While a wafer (W) mounted on a lower electrode (2) is etched as predetermined, the top of a lifter pin (60) electrically connected to the lower electrode (2) remains pressed on the wafer (W) by a spring built in the lifter pin (60). Most part of the rear of the wafer (W) corresponding to a through hole (2a) receives the contact of the top of this lifter pin (60) to keep a condition similar to a contact with the lower electrode (2). Thus, the whole of a substrate to be processed is processed uniformly, so that the uniformity of the in-plane processing of the substrate to be processed is more improved than conventional.</p>
申请公布号 WO2003030235(P1) 申请公布日期 2003.04.10
申请号 JP2002008968 申请日期 2002.09.04
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