METHOD OF FORMING CAVITIES AND GATES

摘要

A method of forming a field emission display device comprising a gate layer MG1, an interlayer dielectric ILD1 separating the gate and cathode electrode M1 comprising forming a blanket layer of polycarbonate over the gate layer implanted with ion tracks to form a mask, and etching the gate layer and cathode cavity T1 with an etchant comprising, octafluorocyclobutane, that is selective with respect to silicon dioxide ILD1 so that a silicon nitride passivation layer PA2 need not be protected by another passivation layer prior to the etching step.