| 摘要 |
The aim of the invention is to provide a method for monitoring the chalcogenation process and, in doing so, to enable this process to be controlled and the determination of its end point. To this end, a method is used in which, during production, the resulting layer is irradiated with light, the reflected light is detected, and the light signal recorded according to time is assigned to characteristic points of the layer production. According to the method, the chalcogenide semiconductor layer is produced by firstly applying, in succession, both metallic precursor layers consisting of elements A and B, and a chalcogenation process with simultaneous optical process monitoring is subsequently carried out during which the series of layers A B is irradiated with light of at least one coherent light source. The light diffusely scattered on the surface is detected, and the scattered light signal measured according to time is evaluated whereby characteristic changes in the resulting layer during chalcogenation are assigned to four significant points of the scattered light curve. |
