| 摘要 |
<p>A silicon sheet directly formed by solidification of a liquid phase silicon by bringing a silicon melt into contact with a cooling base is characterized in that the average silicon crystal particle sizes of the silicon crystals formed on a first major surface (1) that has been in contact with the silicon melt and on a second major surface (2) that has been in contact with the cooling base are both below 10 mm, and the average crystal particle size on the first major surface (1) is larger than that on the second major surface (2). By such a characteristic, a silicon sheet enabling both high-rate growth and good semiconductor characters and a solar cell using the sheet are provided.</p> |
