Ferroelectric random access memory device, has capacitor upper electrode formed around sidewalls of ferroelectric layer which is stacked to cover capacitor lower electrode

摘要

A cylindrical capacitor lower electrode (135) is formed on a semiconductor substrate (10). A ferroelectric layer is conformally stacked to cover the substrate and the lower electrode. A spacer-shaped capacitor upper electrode is formed around the side walls of the ferroelectric layer. An Independent claim is also included for ferroelectric memory device formation method comprising preparing a semiconductor substrate comprising an interlayer dielectric layer and a capacitor lower electrode contact formed through the interlayer dielectric layer; forming a cylindrical capacitor lower electrode on the dielectric layer; stacking a ferroelectric layer by using a chemical vapor deposition (CVD) technique over the entire surface of the substrate and hence lower electrode; and forming a capacitor upper electrode in the shape of a spacer surrounding the sidewall of the ferroelectric layer.