INGAN-BASED LIGHT-EMITTING DIODE CHIP AND A METHOD FOR THE PRODUCTION THEREOF

摘要

A light-emitting diode chip ( 1 ), in which over a substrate ( 2 ), a series of epitaxial layers ( 3 ) with a radiation-emitting active structure ( 4 ) based on InGaN is disposed. Between the substrate ( 2 ) and the active structure ( 4 ), a buffer layer ( 20 ) is provided. The material or materials of the buffer layer ( 20 ) are selected such that their epitaxial surface ( 6 ) for the epitaxy of the active structure ( 4 ) is unstressed or slightly stressed at their epitaxial temperature. The active structure ( 4 ) has In-rich zones ( 5 ), disposed laterally side by side relative to the epitaxial plane, in which zones the In content is higher than in other regions of the active structure ( 4 ). A preferred method for producing the chip is disclosed.