发明名称 METHOD FOR MANUFACTURING PHASE SHIFT MASK
摘要 <p>PROBLEM TO BE SOLVED: To provide a manufacturing method capable of efficiently preventing a charge-up phenomenon and manufacturing a phase shift mask with high accuracy. SOLUTION: An ITO film 6 is formed by application on a transparent insulation substrate 1 on which a light shielding film pattern 4 is formed. A registry 5 is laminated on it and electronic line plotting is performed to an area to be a phase shifter part 8. In this case, since earth is performed by the light shielding film pattern 4, pressure by a metal needle is intensified and no loose connection is generated. In addition, this method is constituted so that the ITO film 6 is brought into contact with the entire area of the light shielding film pattern 4 and no electrically isolated pattern exists. Consequently, since the registry 5 is not charged and no charge-up phenomenon is generated, patterning accuracy of the register 5 is enhanced and the phase shift mask with high accuracy is obtained.</p>
申请公布号 JP2003107666(A) 申请公布日期 2003.04.09
申请号 JP20010304130 申请日期 2001.09.28
申请人 SHARP CORP 发明人 OMORI KIYOSHIGE
分类号 G03F1/30;G03F1/40;G03F1/68;G03F1/70;G03F1/76;G03F1/78;H01L21/027;(IPC1-7):G03F1/08;G03F1/14 主分类号 G03F1/30
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