METHOD OF FORMING FILM, BASE MATERIAL AND DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a film which makes it possible to obtain the film having low hygroscopicity and a good film sticking property to a substrate and a base material having this film and a display device. SOLUTION: This method forms the film containing at least either one of an O atom and an N atom on the surface of the base material and an Si atom by discharging electricity between electrodes facing each other under the atmosphere pressure or the pressure near the atmosphere pressure to put reactive gas into a plasma state and exposing the base material to the reactive gas of the plasma state. The film formed by this method is <=0.95 in x/(x+y) and is 0.2 to 5 wt.% in carbon content when the ratio of the numbers of the oxygen atom and the nitrogen atom is defined as x:y.