| 摘要 |
A predetermined gas, which differs from a cleaning gas and is not required to be decomposed for evacuation, is introduced into a film deposition chamber provided upstream of a main process, wherein a cleaning gas for cleaning the film deposition chamber is introduced into the film deposition chamber, and plasma is developed to decompose the cleaning gas, thereby cleaning up the film deposition chamber. Plasma is developed before introduction of the cleaning gas. Alternatively, subsequent to the main process, a predetermined gas, which differs from the cleaning gas and is not required to be decomposed for evacuation, is introduced into the film deposition chamber, and plasma development is continued from the main process. A cleaning gas may be evacuated after substantially totally decomposed.
|
