| 摘要 |
Apparatus and methods are disclosed for measuring the state of contamination of one or more optical components in an optical system, such as in an X-ray optical system. Also disclosed are microlithography systems including a device for monitoring accumulation of a contaminant substance on a surface of an optical component of the system. The optical component is irradiated with a beam of electromagnetic radiation or a beam of charged particles (e.g., electron beam). The state of contamination of the optical component is measured by detecting electrons emitted from the optical component as the optical component is being irradiated with the beam. Electrons are quantified that are within a specified energy range of emitted electrons.
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