| 摘要 |
The present invention is a chemical mechanical polishing apparatus which polishes a substrate by causing relative movement of this substrate and a polishing pad in a state in which a polishing liquid is interposed between this polishing pad and the substrate, wherein the shape of the above-mentioned polishing pad is an annular shape in which the central portion of a circle or ellipse is bored through in a circular or elliptical shape that has a smaller diameter. The internal diameter li of the hole that is bored through the annular polishing pad is 5 to 75%, preferably 30 to 50%, of the external diameter lo of the polishing pad. The ratio of the external diameter of the polishing pad to the external diameter of the substrate w with the metal film that is being polished is 0.5 to 0.75 times in the case of a circular annular pad; in the case of an elliptical annular pad, this ratio is 0.35 to 0.40 times for the short-axis diameter, and 0.5 to 0.75 times for the long-axis diameter.
|
