| 摘要 |
<p>A layer over a patterned semiconductor is polished and analyzed to determine a polishing endpoint. The analysis may be performed using reflected radiation beams or by a radiation scattering analyzer. The analysis may be performed on virtually any layer using a radiation source. The analysis may be performed with a liquid, such as an aqueous slurry, contacting the substrate. The polishing and analysis may be integrated such that both steps are performed on the same polisher.</p> |
