Reduction of negative bias temperature instability using fluorine implantation

摘要

A process of fabricating a p-type metal oxide semiconductor to affect reduction of negative bias temperature instability (NBTI) in the formed p-type metal oxide semiconductor structure by:a) forming a gate on a gate oxide in a substrate;b) forming a spacer on a sidewall of the gate;c) forming a source/drain extension beside the gate oxide in the substrate or forming a lightly doped drain (LDD) implantation into the gate oxide; andd) implanting F2 between the gate oxide and the source drain extension at a sufficiently large tilted angle and in sufficient amount to affect reduction of negative bias temperature instability characteristics lower than without F2 implantation.