发明名称 |
Method for forming a flash memory cell having contoured floating gate surface |
摘要 |
Methods are provided for forming a contoured floating gate for use in a floating gate memory cell. One method includes forming a floating gate that has a polysilicon layer over a substrate, forming oxide layers on opposing sides of the floating gate, the oxide layer having a vertical thickness greater than a vertical thickness of the floating gate; forming a spacer layer over the oxide layers and the floating gate; removing a portion of the spacer layer such that a top surface of the floating gate positioned laterally toward a middle region of the floating gate is exposed; and removing a portion of the floating gate underlying the exposed top surface of the middle region to form the contoured floating gate.
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申请公布号 |
US6544844(B2) |
申请公布日期 |
2003.04.08 |
申请号 |
US20010818078 |
申请日期 |
2001.03.27 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHANG YUN;HUANG CHIN-YI |
分类号 |
H01L21/28;H01L21/8247;H01L27/115;H01L29/423;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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