| 发明名称 |
Method for manufacturing an inter-layer insulating film |
| 摘要 |
A method for manufacturing an inter-layer insulating film (ex. O3, TEOS or NSG) with a superior surface flatness is disclosed to solve the problem that the surface of the inter-layer film formed on a certain under-layer substrate reveals roughness due to the influence of the substrate. It is provided a method for manufacturing O3 TEOS NSG film after doping nitrogen (N) atoms into the under-layer films, or after forming the under-layer films which contain nitrogen (N) atoms therein.
|
| 申请公布号 |
US5424253(A) |
申请公布日期 |
1995.06.13 |
| 申请号 |
US19930026291 |
申请日期 |
1993.03.04 |
| 申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
USAMI, TAKASHI;YOSHIMARU, MASAKI;SHIMOKAWA, KIMIAKI |
| 分类号 |
H01L21/31;H01L21/316;H01L21/318;H01L21/321;H01L21/768;H01L23/522;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/31 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
