| 摘要 |
PURPOSE: To provide a semiconductor device which has no concentration of stress around a boundary section such as sides and corners in a boundary between flat faces of the inner wall of a trench used in a semiconductor device having STI, and therefore hardly has generation of crystal defects in the boundary section. CONSTITUTION: The semiconductor device 100 comprises a semiconductor substrate 10 having a surface 12 whereon an element is to be formed, and a trench 60 for electrically isolating an element region to be formed with an element and the other region on the surface of the substrate. The boundary section 80 between a side face 62 and a bottom face 64 of the trench is formed into a curved shape having a radius of curvature of 80 nm or above.
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