发明名称 STACKED FILM, INSULATION FILM AND SUBSTRATE FOR SEMICONDUCTOR
摘要 <p>PURPOSE: A stacked film is to provide an insulation layer for a semiconductor as an interlayer dielectric such that the insulation layer has superior adhesion to a coating film formed by a chemical vapor deposition(CVD) process. CONSTITUTION: A film of an organic compound has a carbon content of 60 percent by weight or more. A film prepared by heating a hydrolytic condensate is obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae(51) to (54) described below. The chemical formula 51 is HSi(OR¬51)3 wherein R¬1 represents an organic radical of the first valence. The chemical formula 54 is R54b'(R55O)3-b'Si-(R58)d'-Si(OR56)3-c'R57c' wherein R54, R55, R56, R57 and R58 are different or the same while representing the first valences, b' and c' are different or the same while representing integers of 0 to 2, and R58 is a radical represented by an oxygen atom, a phenylene radical or a radical indicated by -(CH2)n'- (n' is an integer from 1 to 6 and d' represents 0 or 1).</p>
申请公布号 KR20030027827(A) 申请公布日期 2003.04.07
申请号 KR20020058900 申请日期 2002.09.27
申请人 JSR CORPORATION 发明人 NISHIKAWA MICHINORI;SEKIGUCHI MANABU;PATZ MATTHIAS;SHIOTA ATSUSHI;YAMADA KINJI
分类号 H01L21/31;B05D3/02;B32B9/04;C08G65/40;C09D165/00;C09D171/00;C09D183/04;C09D183/14;H01L21/312;(IPC1-7):H01L21/31 主分类号 H01L21/31
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