METHOD FOR FORMING CU INTERCONNECTION OF SEMICONDUCTOR DEVICE USING ELECTROLESS PLATING

摘要

PURPOSE: A method for forming Cu interconnection of a semiconductor device using electroless plating is provided to simplify a fabrication process by replacing a pretreatment process using vacuum equipment by a wet process, and to omit a wafer planarization process by selectively growing copper only in an interconnection. CONSTITUTION: A cleaning process is performed to eliminate contaminant and uniformly deposit copper. A pretreatment process using metal catalyst is performed to have a tendency to spontaneous catalyst activation in an area where the copper is deposited while a process temperature is varied to grow a catalyst grain by using a metal catalyst pretreatment solution having different bonding force and size on a wafer and an interconnection formation region. A cleaning process is performed to eliminate the metal catalyst from the surface of the wafer. Copper is grown in a region of the resultant structure where the metal catalyst is formed by a copper electroless plating solution.