| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device that the resistance between the drain and source is reduced when the device is turned on and it can obtain full normally-off characteristics, when the device is turned off. SOLUTION: This MOS silicon carbide semiconductor device has a P-type base region formed on a first main surface of an N-type silicon carbide semiconductor substrate, an N-type source region formed in the base region, an N-type drain region formed in a part of the substrate, and a gate electrode formed on the base region with a gate insulation film in between. A plurality of N-type channel regions are formed in a part of the base region and under the gate electrode.
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