TUNNELING MAGNETORESISTIVE ELEMENT AND MAGNETIC DEVICE USING THE SAME, AND METHOD AND DEVICE FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a tunneling magnetoresistive element which can be heat- treated at low temperature, so that the barrier of an obtained insulating layer is sufficiently high and then realizes high MR, a magnetic device using it, and to provide a method and a device for manufacturing the device. SOLUTION: The tunneling magnetoresistive element 1 has a 1st ferromagnetic layer 2, an insulating layer 2, and a 2nd ferromagnetic layer 4 laminated on top of each other; and the insulating layer 3 has a filmed metal layer or alloy layer oxidized into metal oxide by a plasma treating device, using a radial line slot antenna (RLSA), and its resistance is optionally controlled arbitrarily within a specified range of the resistance through heat treatment after film formation.