| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride compound semiconductor element of high yield, and a method for manufacturing a gallium nitride compound semiconductor light emitting element of high yield. SOLUTION: By a liquid phase deposition method (LPD), a dielectric film is not deposited on a resist pattern but selectively deposited on a gallium nitride compound semiconductor layer on which no resist pattern is formed. Consequently, an electrode and a high reflection coating film, etc., are formed on a designed place without displacement. |
