| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a test method by which a defective product, in which there is possibility of unexpected rewriting of data, can be eliminated surely as to a nonvolatile semiconductor memory. SOLUTION: It is discriminated whether a storage element 13, for storing binary information in accordance with injection/non-injection of electric charges to the floating gate 13a arranged in an electrical insulation state on a semiconductor substrate on which a source S and a drain D are formed, can hold surely electric charges previously injected into the floating gate or not. Almost equal voltage is applied to both of the source and the drain as test voltage for extracting the electric charges held in the gate from the floating gate.</p> |
