| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that breakdown due to heat occurs since heat that is generated in the actuation of a semiconductor device cannot be dissipated to the outside efficiently. SOLUTION: The package for accommodating a semiconductor device comprises a board 1, a frame-like insulator 2 having a wiring layer 6, and a lid body 3. The frame-like insulator 2 is formed by crystalline glass made of 40 to 46 wt.% silicon oxide, 25 to 30 wt.% aluminum oxide, 8 to 13 wt.% magnesium oxide, 6 to 9 wt.% zinc oxide, and 8 to 11 wt.% boron oxide. At the same time, the board 1 is made of tungsten and copper and has a three-layer structure. In the three-layer structure, upper and lower layers 1b and 1d made of 35 to 50 wt.% tungsten and 50 to 65 wt.% copper are provided on both the surfaces of an intermediate layer 1c made of 55 to 95 wt.% tungsten and 5 to 45 wt.% copper. |
