PLASMA GENERATOR

摘要

PROBLEM TO BE SOLVED: To provide a microwave plasma generator for a plasma processing device and an ion beam processing device which perform various processes using plasma in the field of semiconductor processing, enabled to stably generate a uniform plasma having big area for long period at low gas pressure. SOLUTION: A plasma is generated at low gas pressure (10 mTorr or less) by a microwave introducing method which uses one or plural pairs of inside antennas 5 for a bucket type ion source.