| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermal annealing furnace having a quartz process tube, able to produce an annealed wafer with few particles and little metallic contamination without lowering productivity even when the wafer is thermally annealed in an atmosphere of an argon gas, a hydrogen gas or their mixed gas. SOLUTION: In the thermal annealing furnace having the quartz process tube for thermally annealing a semiconductor substrate in an atmosphere of an argon gas, a hydrogen gas or their mixed gas, a first cover member, which covers the inner wall surface of the quartz process tube and which is detachable, is provided in the area outside of the soaking zone on the furnace inlet side of the thermal annealing furnace.
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