METHOD FOR SELECTING DIMENSION MEASURING POSITION OF LSI PATTERN, METHOD FOR PREPARING DIMENSION MEASURING INFORMATION, AND METHOD FOR DECIDING DIMENSION MEASURING ORDER

摘要

PROBLEM TO BE SOLVED: To select a dimension measuring position from a real pattern inside a chip area on a semiconductor wafer without making troubles and without making any mistakes in a short time. SOLUTION: In selecting a dimension measuring position of a photomask or a pattern in an LSI chip area on a wafer processed by using the photomask from layout data of an LSI by using a CAD device, steps are provided for: obtaining a dimension measuring position selection condition of an LSI pattern: preparing design rule check (DRC) command description for selecting a dimension measuring position of the LSI pattern from the layout data of the LSI on the basis of the dimension measuring position selection condition; inputting the DRC description and the LSI pattern and performing design rule check; and limiting the number of dimension measuring positions for extracting as many as the required number of dimension measuring positions by using dimension measuring position candidates to an LSI pattern outputted by performing the DRC as an input.