NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a high quality laser having a low threshold current by controlling warp and band structure by controlling thermal stress of a nitride based semiconductor element. SOLUTION: In a nitride based semiconductor laser formed on a sapphire substrate, the width of a ridge stripe including an active layer is formed to have a length greater than or equal to that of a laser resonator. As a result, thermal stress vertical to the resonator direction in a C plane can be made smaller than thermal stress in the resonator direction in the C plane. The substrate is restrained form warping in the resonator direction, and resonance loss can be reduced, so that the threshold current of a laser oscillation can be reduced.