| 摘要 |
PROBLEM TO BE SOLVED: To reduce leakage current by relieving surface electric field in a superjunction Schottky barrier diode which is provided with a first and a second main electrodes, a first first conductivity region which forms Schottky junction with the first main electrode, a parallel p-n layer where a second first conductivity region which is depleted when a reverse voltage is applied and a second conductivity region are arranged alternately, and a first conductivity low resistance layer with which the first main electrode is in ohmic contact. SOLUTION: A p-type partition region 7, whose impurity concentration is higher than that of a part adjacent to a second main surface, is arranged on a prescribed region of a first main surface side of a p-type partition type 1b. Alternatively, the width is made greater than that of the part adjacent to the second main surface. A trench, in which an insulating film 8 is formed on an inner surface and conductor 9 is buried in it, is arranged at least on a part of an n-type surface region 3 above the p-type partition type 1b. |
