发明名称 |
Method of buried strap out-diffusion formation by gas phase doping |
摘要 |
A method of forming a buried strap comprising the following sequential steps. A substrate having a pad oxide layer formed thereover is provided. A masking layer is formed over the pad oxide layer. The masking layer, pad oxide layer and substrate are etched to form a trench within the substrate. The trench having an outer sidewall and an upper portion. The upper portion of the trench is lined with a collar. A poly plate is formed within the trench. The poly plate and collar are etched below the substrate to form a recessed poly plate and a recessed collar and exposing a portion of outer sidewall of trench. Ions are implanted into the substrate through exposed outer sidewall of trench by gas phase doping. A SiN sidewall layer is formed over the exposed outer sidewall of trench at a temperature sufficient to diffuse the implanted ions further into the substrate to form the buried strap.
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申请公布号 |
US2003064598(A1) |
申请公布日期 |
2003.04.03 |
申请号 |
US20020195355 |
申请日期 |
2002.07.15 |
申请人 |
PROMOS TECHNOLOGIES, INC. |
发明人 |
CHUNG JESSE;WANG HSIAO-LEI;LIAO HUNG-KWEI |
分类号 |
H01L21/74;H01L21/8242;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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