摘要 |
<p>A method of processing a quartz member for a plasma processing device capable of suppressing the production of particles at the beginning of the use thereof and the production of chips thereafter, the quartz member for the plasma processing device, and the plasma processing device having the quartz member mounted thereon, the method comprising the steps of removing a large number of cracks 155 produced, after a diamond grinding, in the quartz member 151 for the plasma processing device used for a shield ring and a focus ring by performing a surface processing with abrasive grains of, for example, #320 to 400 in grain size, and performing the surface processing by using abrasive grains of smaller grain size to remove ruptured layers 163 while maintaining irregularities capable of adhering and holding deposit thereto.</p> |
申请人 |
TOKYO ELECTRON LIMITED;SUGIYAMA, NORIKAZU;SAEGUSA, HIDEHITO;OKAYAMA, NOBUYUKI;IIMURO, SHINICHI;IMAFUKU, KOSUKE;NAGAYAMA, NOBUYUKI;MITSUHASHI, KOUJI;NAKAYAMA, HIROYUKI;HUANG, YAHUI |
发明人 |
SUGIYAMA, NORIKAZU;SAEGUSA, HIDEHITO;OKAYAMA, NOBUYUKI;IIMURO, SHINICHI;IMAFUKU, KOSUKE;NAGAYAMA, NOBUYUKI;MITSUHASHI, KOUJI;NAKAYAMA, HIROYUKI;HUANG, YAHUI |