发明名称 Semiconductor device and method for patterning
摘要 In a masking pattern (a) for patterning word and data lines, length is changed between adjacent word lines so as to be shifted from each other at their tips, and furthermore, the tip of each word line is cut obliquely. It is thus possible to prevent the resist pattern from separation and contact of adjacent patterns. Consequently, it is also possible to prevent break failures of patterned lines and short failures between those patterned lines.
申请公布号 US2003062550(A1) 申请公布日期 2003.04.03
申请号 US20020282044 申请日期 2002.10.29
申请人 HITACHI, LTD. 发明人 SEKIGUCHI TOMONORI;TANAKA TOSHIHIKO;YAMANAKA TOSHIAKI;SAKATA TAKESHI;KIMURA KATSUTAKA
分类号 G03F1/08;G03F1/14;G03F1/32;G03F1/36;G03F1/68;G03F7/20;H01L21/027;H01L21/3213;H01L21/8242;H01L23/528;H01L27/10;H01L27/105;(IPC1-7):H01L27/10 主分类号 G03F1/08
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