| 摘要 |
The present invention provides a single crystal wafer, wherein the main surface has a plane or a plane equivalent to a plane tilting with respect to a Ä100Ü axis of single crystal by angles of alpha (0 DEG < alpha < 90 DEG ) for the Ä011Ü direction, beta (0 DEG < beta < 90 DEG ) for the Ä01-1Ü direction and gamma (0 DEG </= gamma < 45 DEG ) for the Ä10-1Ü or Ä101Ü direction. Thus, a single crystal wafer that can sufficiently bear device production processes even with a small wafer thickness is provided and thereby loss of single crystal raw material is reduced. Further, by using such a wafer, MIS type semiconductor devices and solar cells are provided at a low cost. <IMAGE> |
