| 摘要 |
1,245,653. Semi-conductor devices. MARCONI CO. Ltd. 16 July, 1969 [14 Aug., 1968], No. 38862/68. Heading H1K. In the manufacture of an integrated circuit containing a photodiode and an associated MOST the surface region 7 of the diode and the source and drain regions 8, 9 of the transistor are produced simultaneously by indiffusion of the same impurity. Though the diode surface region 7 is much shallower, this may be achieved by exposing the source and gate areas directly to the impurity while covering the area of the surface region with an impurity-pervious coating-the rest of the body is masked. The body may be of silicon provided with a silicon oxide masking layer 2 and with a much thinner silicon oxide layer 4 which is pervious to the boron or phosphorus used as the diffusant. After the diffused regions have been formed the oxide in the gate region is replaced by a new thinner layer acting as the gate insulation and the oxide over the diode is thinned to provide an anti-reflection coating. Aluminium contacts are provided. |
