| 摘要 |
The DRAM (1) contains a memory cell field (2) with numerous, addressable memory cells and an adjustable clock signal generator (6) for brush-up of the cells. An adjustable circuit (11) adjusts the brush-up frequency of the clock signal generator delivered brush-up clock signal. The circuit operates in dependence on a temp. detection signal of a temp. sensor circuit (16). The brush-up frequencies are programmable for different temp. regions.
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