发明名称 |
METHOD FOR OBTAINING A SELF-SUPPORTED SEMICONDUCTOR THIN FILM FOR ELECTRONIC CIRCUITS |
摘要 |
The invention concerns a method for obtaining a self-supported thin film made of a semiconductor material, supporting at least an electronic component and/or circuit (3) one of its surfaces, from a wafer (1) of said material, the latter including a front side (2), supporting or designed to support at least an electronic component and/or circuit (3) and a rear side (4'). Said method is characterised in that it comprises steps which consist in: a) implanting atomic species inside said wafer (1), from its rear side (4, 4'), so as to obtain a weakened zone (5) delimiting a front part (6) extending from said front side (2) to said weakened zone (5) and a rear part (7) formed by the rest of the wafer (1); d) removing said rear part (7), the front part (6); repeating, if required, steps a) and b) on the rear side of said front part (6) until the latter has the desired thickness for forming said self-supported thin film. |
申请公布号 |
WO03017357(A8) |
申请公布日期 |
2003.04.03 |
申请号 |
WO2002FR02879 |
申请日期 |
2002.08.14 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;RAYSSAC, OLIVIER;MAZURE, CARLOS;GHYSELEN, BRUNO |
发明人 |
RAYSSAC, OLIVIER;MAZURE, CARLOS;GHYSELEN, BRUNO |
分类号 |
H01L21/304;H01L21/762;(IPC1-7):H01L21/762 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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