| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a thick and high-quality silicon carbide single crystal, and to provide a method of manufacturing an electronic device using the same. SOLUTION: The method of producing the single crystal material includes a process for forming a cavity 2 at the inside of a silicon carbide single crystal substrate 1, and a process for sublimating silicon carbide from the first surface of the substrate 1, which the first surface faces a space of the cavity 2, and crystallizing the sublimated silicon carbide on the second surface of the substrate 1, which the second surface faces the first surface while putting the cavity 2 between them, by setting the temperature of the first surface of the substrate 1 higher than that of the second surface of the substrate 1.
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