发明名称 |
Shallow angle interference process and apparatus for determining real-time etching rate |
摘要 |
A process and apparatus for determining a real-time etching rate during a plasma mediated etching process. Real-time etching rate determination includes monitoring an interference pattern generated by a direct light beam and a reflected light beam from a wafer surface. A viewing angle for recording the interference pattern is nearly parallel to the wafer plane and at a fixed focal point on the layer to be removed. The direct light beam and reflected light beams are generated in situ during plasma processing. |
申请公布号 |
US2003062337(A1) |
申请公布日期 |
2003.04.03 |
申请号 |
US20010905032 |
申请日期 |
2001.07.13 |
申请人 |
CARDOSO ANDRE G.;JANOS ALAN C. |
发明人 |
CARDOSO ANDRE G.;JANOS ALAN C. |
分类号 |
H01L21/3065;H01J37/32;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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