| 摘要 |
An oriented ferroelectric thin-film device includes a substrate, a conductive thin-film disposed on the substrate, and a ferroelectric thin-film disposed on the conductive thin-film, wherein the conductive thin-film comprises a polycrystalline conductive material, the ferroelectric thin-film comprises a Pb-containing perovskite oxide and includes a first ferroelectric sub-layer and a second ferroelectric sub-layer, the first ferroelectric sub-layer is disposed on the conductive thin-film and has a composition changing in the thickness direction, and the second ferroelectric sub-layer is disposed on the first ferroelectric sub-layer and has a constant composition. The ferroelectric thin-film is oriented in a uniaxial direction such that the c-axis is perpendicular to the substrate. A method for manufacturing the oriented ferroelectric thin-film device includes the steps of forming a polycrystalline conductive thin-film on a substrate, and forming a ferroelectric thin-film on the polycrystalline conductive thin-film.
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