发明名称 |
Semiconductor laser device, semiconductor laser module, and semiconductor laser control method |
摘要 |
There is provided a semiconductor laser device in which a light amplifier integrated excitation light source is obtained by forming on a n-InP substrate a semiconductor laser diode section that outputs laser light having a plurality of oscillation vertical modes that are below the threshold value at which stimulated Brillouin scattering is generated together with a light amplifier section that amplifies laser light generated in the semiconductor laser diode section and outputs it to the outside. As a result, wavelength stability is increased and the generation of kinks is prevented.
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申请公布号 |
US2003063646(A1) |
申请公布日期 |
2003.04.03 |
申请号 |
US20020115029 |
申请日期 |
2002.04.04 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
YOSHIDA JUNJI |
分类号 |
H01S5/026;H01S5/10;H01S5/12;H01S5/50;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/026 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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