发明名称 DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention
摘要 A ferroelectric thin film capacitor has smooth electrodes permitting comparatively stronger polarization, less fatigue, and less imprint, as the ferroelectric capacitor ages. The smooth electrode surfaces are produced by DC reactive sputtering.
申请公布号 US6541375(B1) 申请公布日期 2003.04.01
申请号 US19980128249 申请日期 1998.08.03
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HAYASHI SHINICHIRO;ARITA KOJI
分类号 C23C14/34;C23C14/08;H01L21/02;H01L21/28;H01L21/285;H01L21/8246;H01L27/105;(IPC1-7):H01L21/44 主分类号 C23C14/34
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