发明名称 |
DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention |
摘要 |
A ferroelectric thin film capacitor has smooth electrodes permitting comparatively stronger polarization, less fatigue, and less imprint, as the ferroelectric capacitor ages. The smooth electrode surfaces are produced by DC reactive sputtering.
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申请公布号 |
US6541375(B1) |
申请公布日期 |
2003.04.01 |
申请号 |
US19980128249 |
申请日期 |
1998.08.03 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HAYASHI SHINICHIRO;ARITA KOJI |
分类号 |
C23C14/34;C23C14/08;H01L21/02;H01L21/28;H01L21/285;H01L21/8246;H01L27/105;(IPC1-7):H01L21/44 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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