发明名称 |
Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases |
摘要 |
Methods of using reactive gases containing a perfluoroketone having 4 to 7 carbon atoms for removing unwanted deposits that build up in a vapor reactor, for etching dielectric and metallic materials in a vapor reactor, and for doping a material in a vapor reactor are described. The perfluoroketones perform as well as or better than the standard perfluorocarbons used in the semiconductor industry but have minimal impact on global warming.
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申请公布号 |
US6540930(B2) |
申请公布日期 |
2003.04.01 |
申请号 |
US20010841376 |
申请日期 |
2001.04.24 |
申请人 |
3M INNOVATIVE PROPERTIES COMPANY |
发明人 |
KESARI SUSRUT;BEHR FRED E.;COSTELLO MICHAEL G.;FLYNN RICHARD M.;MINDAY RICHARD M.;OWENS JOHN G.;VITCAK DANIEL R.;ZAZZERA LARRY A. |
分类号 |
C09K13/08;C23C14/00;C23C16/44;C23F4/00;H01L21/304;H01L21/3065;H01L21/31;H01L21/311;H01L21/3213;(IPC1-7):H01L21/00 |
主分类号 |
C09K13/08 |
代理机构 |
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地址 |
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