| 摘要 |
PURPOSE: A semiconductor memory device considering masking of a control signal is provided to perform a normal operation of a semiconductor memory device by using a signal for data masking as masking of a control signal. CONSTITUTION: A write data masking signal(wdm) is used for intercepting an output of a lay12 signal which is generated by synthesizing a bay12 signal(bay12) and a read write strobe signal(rdwtstbzp). The bay12 signal(bay12) is synthesized with the read write strobe signal(rdwtstbzp) when the write data masking signal(wdm), the bay12(bay12) signal, and a read write strobe signal(rdwtstbzp) are inputted into a block lay12(210) as an address receiver within a bank. A dummy column access signal(Yi) is not generated from a Y decoder(230) because the output of the lay12 signal(lay12) is intercepted by the write data masking signal(wdm). The bay signal is used as a bank address column signal. The block lay12(210) is located in a bank within a chip.
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