| 摘要 |
PURPOSE: A method for manufacturing a capacitor in a semiconductor device is provided to improve throughput without falling a process temperature and pressure and to reduce a leakage current by easily controlling compositions of a dielectric film. CONSTITUTION: A lower electrode(26) is formed on a semiconductor substrate(21) including a polysilicon plug(22). An STO(SrTiO3) thin film(27) as the first dielectric film is formed on the lower electrode(26). A BST thin film(28) having perovskite structure as the second dielectric film is formed on the STO thin film(27) using the STO thin film(27) as a seed layer. An upper electrode(29) is then formed on the BST thin film(28). At the time, the STO thin film(27) is formed by using an ALD(Atomic Layer Deposition) method.
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